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| SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type 2SK2668 ( FP3W90HVX2 ) 900V 3A FEATURES Input capacitance (Ciss) is small. OUTLINE DIMENSIONS Case : ITO-3P (Unit : mm) Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 240V input High voltage power supply Inverter RATINGS Absolute Maximum Ratings Tc = 25 Item Symbol Tstg Storage Temperature Tch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage Continuous Drain CurrentDC ID IDP Continuous Drain CurrentPeak) IS Continuous Source CurrentDC PT Total Power Dissipation IAR Repetitive Avalanche Current Single Avalanche Energy EAS Repetitive Avalanche Energy EAR Vdis Dielectric Strength TOR Mounting Torque Conditions Ratings -55150 150 900 30 3 6 3 40 3 48 4.8 2 0.8 Unit V Pulse width10s, Duty cycle1/100 A W A mJ kV Nm Tch = 150 Tch = 25 Tch = 25 Terminals to case,AC 1 minute Recommended torque 0.5 Nm Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd HVX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tranconductance Static Drain-Source On-tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage jc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff 2SK2668 ( FP3W90HVX2 ) Conditions Min. 900 Typ. Max. 250 0.1 1.5 2.5 2.5 3.5 3.0 Unit V A S V ID = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = 30V, VDS = 0V ID = 1.5A, VDS = 10V ID = 1.5A, VGS = 10V ID = 1mA, VDS = 10V IS = 1.5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 3A VDS = 25V, VGS = 0V, f = 1MHZ ID = 1.5A, RL = 100, VGS = 10V 30 630 16 67 40 140 4.7 3.5 1.5 3.12 / nC pF 70 230 ns Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2668 6 Tc = -55C 5 Transfer Characteristics 25C Drain Current ID [A] 4 100C 3 150C 2 1 VDS = 25V TYP 0 0 5 10 15 20 Gate-Source Voltage VGS [V] 2SK2668 100 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] 10 ID = 1.5A 1 0.1 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] 2SK2668 6 Gate Threshold Voltage 5 Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK2668 10 Safe Operating Area 100s 200s 1 Drain Current ID [A] 1ms R DS(ON) limit 10ms 0.1 DC Tc = 25C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK2668 Transient Thermal Impedance 10 1 Transient Thermal Impedance jc(t) [C/W] 0.1 0.01 10-4 10-2 10-3 10-1 100 101 102 Time t [s] 2SK2668 100 Single Avalanche Energy Derating Single Avalanche Energy Derating [%] 80 60 40 20 0 0 50 100 150 Starting Channel Temperature Tch [C] 2SK2668 10000 Capacitance 1000 Capacitance Ciss Coss Crss [pF] Ciss 100 Coss Crss 10 f=1MHz Ta=25C TYP 1 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2668 Single Avalanche Current - Inductive Load VDD = 100V VGS = 15V 0V Rg = 70 10 IAS = 3A EAR = 4.8mJ EAS = 48mJ Single Avalanche Current IAS [A] 1 0.1 0.1 1 10 100 Inductance L [mH] 2SK2668 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] 2SK2668 500 Gate Charge Characteristics 20 VDS Drain-Source Voltage VDS [V] VDD = 400V 300 200V 100V VGS 15 10 200 5 100 ID = 3A TYP 0 0 10 20 30 40 0 50 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 400 |
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